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registrar@vssut.ac.in 8480441756

Electronics and Tele-communication

Name : Dr. Manasa Ranjan Jena
Designation : Assistant Professor
Phone No. : 9438415686
Email Id : manasjena82@gmail.com
Date of Birth : 27-06-1982
Date of Joining : 06-06-2014

B.Tech.(Electronics & Instrumentation), M.Tech.(Microelectronics and VLSI, IIT Kharagpur), PhD (Sambalpur University).

Microelectronics and VLSI Design

Lecturer at NIST Berharmpur from 20-04-2005 to 15-03-2006. Asst.Prof at ITER Bhubaneswar from 20-03-2006 to 15-07-2009. Asst.Prof at ITER Bhubaneswar from 01-12-2011 to 27-05-2014.

Graduate Level : Basic Electronics, Analog Electronics, Digital Electronics, Advanced Electronics, Physics of Devices, VLSI Design, Process control Instrumentation
Post Graduate Level : VLSI Technology, VLSI Design, TCAD Design,ASIC Modelling, Device Modelling

Device Modelling And Circuit Design

Ph. D. Candidates : NIL
M. Tech. Candidates : 16
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International Publications

  1. M.R. Jena, SarthakMohapatra, A.K. Panda, G.N. Dash, “Analytical approach assisted simulation study of Si, SiGe, and InP based BJT," International journal of nano electronics and materials, Vol 12, No. 2, apr 2019, pp 237-250.
  2. M.R. Jena, A.K. Panda, G.N. Dash, “Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor, Microsystem Technologies, Feb 2020 doi.org/10.1007/s00542-020-04764-2.
  3. M.R. Jena, A.K. Panda, G.N. Dash, “Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor,” International Journal of Electronics Letters, May 2021, https://doi.org/10.1080/21681724.2021.1941280.
  4. M.R. Jena, A.K.Panda, G.N. Dash, “Self-Heating Effects in SiGe Heterojunction Bipolar Transistor with Different Ge Grading Profile, International Journal of Innovative Technology and Exploring Engineering (IJITEE) ISSN: 2278-3075, Volume-8 Issue-12, October 2019.
  5. M.R. Jena, A.K. Panda, G.N. dash, “Effect of spacer on the performance characteristics of SiGe HBT, International Journal of Electronics Engineering (ISSN:: 0973-7383) Volume 11 • Issue 1 pp.. 544-552 Jan 2019-June 2019.
  6. M.R. Jena, A.K.Panda, G.N.Dash, “A Comparative Analysis InP/InGaAs δ Doped based NPN and PNP HBT, International Journal of Engineering Research & Technology (IJERT), Vol. 8 Issue 09, September-2019.
  7. M.R. Jena, A.K. Panda, G.N.Dash, “ Analytical approach assisted simulation study of drift and diffusion-based transistor, IJMECE Vol 6, Issue 5, pp 78-82, sept 2018.
NIL
DATA TO BE UPDATED...
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NIL
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Present Address : 
Department of Electronics & Telecommunication,
Veer Surendra Sai University of Technology, Burla
District: Sambalpur PIN:768018		   Permanent Address : 
S/o : Nimai Charan Jena
Itamati,Medical Road,
Nayagarh.pin-752068

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